APM4953K
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.00
V
GS
= -10V
1.75
I
DS
= -4.9A
Source-Drain Diode Forward
20
10
T
j
=150 C
o
Normalized On Resistance
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25
R
ON
@T
j
=25 C: 53m
Ω
0
25
50
75
100 125 150
o
-I
S
- Source Current (A)
T
j
=25 C
1
o
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T
j
- Junction Temperature (°C)
-V
SD
- Source-Drain Voltage (V)
Capacitance
3000
Frequency=1MHz
2500
Gate Charge
10
V
D
= -15V
I
D
= -4.9A
2000
-V
GS
- Gate-source Voltage (V)
30
8
C - Capacitance (pF)
6
1500
Ciss
1000
Coss
Crss
4
500
2
0
0
5
10
15
20
25
0
0
5
10
15
20
25
-V
DS
- Drain-Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
