APM4953 PDF Datasheet浏览和下载

型号.:
APM4953
PDF下载:
下载PDF文件
内容描述:
双P沟道增强型MOSFET
[Dual P-Channel Enhancement Mode MOSFET]
文件大小:
219 K
文件页数:
9 Pages
品牌Logo:
品牌名称:
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
PCB Prototype
  • 供货商
  • IC型号
  • 厂家
  • 批号
  • 数量
  • 封装
  • 单价/备注
  • 操作
 浏览型号APM4953的Datasheet PDF文件第2页浏览型号APM4953的Datasheet PDF文件第3页浏览型号APM4953的Datasheet PDF文件第4页浏览型号APM4953的Datasheet PDF文件第5页浏览型号APM4953的Datasheet PDF文件第6页浏览型号APM4953的Datasheet PDF文件第7页浏览型号APM4953的Datasheet PDF文件第8页浏览型号APM4953的Datasheet PDF文件第9页 
APM4953
Dual P-Channel Enhancement Mode MOSFET
Features
-30V/-4.9A, R
DS(ON)
= 53mΩ(typ.) @ V
GS
= -10V
R
DS(ON)
= 80mΩ(typ.) @ V
GS
= -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Pin Description
5
/
5
/

&
%
,
,
,
,
!
"
$
#
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
/
SO
8
5
5
/
,
,
,
,
Ordering and Marking Information
APM 4953
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
P-Channel MOSFET
P ackage C ode
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 °C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
A P M 4953 K :
A P M 4953
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-30
±25
T
A
= 25°C
-4.9
-30
Unit
V
A
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
1
www.anpec.com.tw