APM4953
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.250
On-Resistance vs. Junction Temperature
2.00
R
DS(on)
-On-Resistance (Ω)
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
1
2
3
4
5
6
7
8
9
10
R
DS(on)
-On-Resistance (Ω)
(Normalized)
0.225
-I
,
= 4.9A
1.75
1.50
1.25
-V
GS
=10V
-I
D
=4.9A
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
100 125 150
-V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
10
Capacitance
2800
2400
-V
GS
-Gate-Source Voltage (V)
-V
D
=10V
-I
D
=4.9A
Frequency=1MHz
8
6
Capacitance (pF)
2000
1600
1200
800
400
Ciss
4
2
Coss
Crss
0
0
5
10
15
20
25
0
0
5
10
15
20
25
30
Q
G
- Gate Charge (nC)
-V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
4
www.anpec.com.tw
1.00
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
