APM7312
Dual N-Channel Enhancement Mode MOSFET
Features
•
20V/6A , R
DS(ON)
=35mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=45mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=110mΩ(typ.) @ V
GS
=2.5V
Pin Description
SO-8
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
•
•
•
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Top View
D1 D1
D2 D2
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G1
G2
Ordering and Marking Information
APM7312
Handling Code
Tem p. Range
Package Code
S1
S2
N-Channel MOSFET
Package Code
K : SO-8
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TR : Tape & Reel
APM 7312 K :
APM 7312
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
20
±16
6
20
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
1
www.anpec.com.tw
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
