APM7313K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
(T
A
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=10V
Rating
30
±20
6
24
3
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
Parameter
Test Condition
APM7313K
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
V
GS
=0V, I
DS
=250µA
V
DS
=20V, V
GS
=0V
T
A
=25°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D S
=6A
V
GS
=4.5V, I
DS
=2A
I
SD
=2A, V
GS
=0V
30
1
30
1
1.5
21
27
0.7
2
±100
28
42
1.3
V
µA
V
nA
mΩ
V
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Drain Charge
19
V
DS
=15V, V
GS
=10V,
I
DS
=6A
1.6
3.6
25
nC
Gate-Source Charge
C opyright
©
ANPEC Electronics C orp.
Rev. B.3 - Nov., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
