APM7314
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
0.050
0.045
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On Resistance (Ω) (Normalized)
1.6
I
DS
=3.5A
R
DS (ON)
- On-Resistance (Ω)
V
GS
=10V
I
DS
=3.5A
1.4
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
2
3
4
5
6
7
8
9
10
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
Gate Voltage (V)
T
j
-Junction Temperature (°C)
Gate Charge
10
2000
Capacitance Characteristics
V
GS
-Gate-to-Source Voltage (V)
V
DS
=15V
I
DS
=10A
8
1000
Ciss
C-Capacitance (pF)
6
500
Coss
4
2
100
Crss
Frequency=1MHz
0
0
5
10
15
20
25
30
0.1
1
10
30
Q
G
-Total Gate Charge (nC)
V
DS
-Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002
5
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
