APM7322K
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.6
V
GS
= 10V
I
DS
= 6.2A
30
Source-Drain Diode Forward
Normalized On Resistance
1.4
10
T
j
=150 C
o
1.2
1.0
I
S
- Source Current (A)
T
j
=25 C
1
o
0.8
0.6
R
ON
@T
j
=25 C: 28m
Ω
0
25
50
75
100 125 150
o
0.4
-50 -25
0.1
0.0
0.2 0.4
0.6
0.8
1.0
1.2 1.4
1.6
T
j
- Junction Temperature (°C)
V
SD
- Source - Drain Voltage (V)
Capacitance
1000
Frequency=1MHz
10
V
DS
=10V
I
D
= 6.2A
Gate Charge
V
GS
- Gate - source Voltage (V)
800
8
C - Capacitance (pF)
Ciss
600
6
400
4
200
Crss
0
Coss
2
0
0
5
10
15
20
25
30
0
5
10
15
20
25
V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
