APM9410
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/8A , R
DS(ON)
=15mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=23mΩ(typ.) @ V
GS
=4.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Pin Description
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
Top View
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G
D
Ordering and Marking Information
APM 9410
H a n d lin g C o d e
Tem p. R ange
P ackage C ode
S
N-Channel MOSFET
P ackage C ode
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
APM 9410 K :
APM 9410
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
8
32
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
1
www.anpec.com.tw
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
