APM9428K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
Rating
20
±10
V
GS
=4.5V
6
20
1.7
150
-55 to 150
T
A
=25°C
T
A
=100°C
2
0.8
62.5
W
°C/W
A
°C
V
A
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM9428K
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
V
GS
=0V, I
DS
=250µA
V
DS
=16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=6A
V
GS
=2.5V, I
DS
=2A
I
SD
=1.7A, V
GS
=0V
20
1
30
0.45
0.7
25
50
0.7
1
±100
30
60
1.3
V
µA
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Drain Charge
10
V
DS
=10V, V
GS
=4.5V,
I
DS
=6A
2.6
2.5
12
nC
Gate-Source Charge
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
