APM9430K
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.0
V
GS
= 4.5V
1.8
I
DS
= 4A
10
T
j
=150 C
o
Source-Drain Diode Forward
20
Normalized On Resistance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
R
ON
@T
j
=25 C: 40m
Ω
0
25
50
75
100 125 150
o
I
S
- Source Current (A)
1
T
j
=25 C
o
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
T
j
- Junction Temperature (°C)
V
SD
- Source - Drain Voltage (V)
Capacitance
700
Frequency=1MHz
9
10
V
DS
=10V
I
DS
= 4A
Gate Charge
600
500
400
300
200
Coss
100
0
Crss
V
GS
- Gate-source Voltage (V)
8
7
6
5
4
3
2
1
0
C - Capacitance (pF)
Ciss
0
4
8
12
16
20
0
4
8
12
16
20
24
V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
