APM9933
Dual P-Channel Enhancement Mode MOSFET
Features
•
-20V/-3.5A , R
DS(ON)
=45mΩ(typ.) @ V
GS
=-4.5V
-2.9A , R
DS(ON)
=52mΩ(typ.) @ V
GS
=-3.0V
-2.6A , R
DS(ON)
=60mΩ(typ.) @ V
GS
=-2.7V
Pin Description
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
•
•
•
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SOP-8 Package
SOP
−
8
S1
S2
Applications
•
G1
G2
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
D1
D1
D2
D2
Ordering and Marking Information
APM 9933
H a n d lin g C o d e
Tem p. R ange
P a ck ag e C o d e
P-Channel MOSFET
P ackage C ode
K : S O P -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & R eel
A P M 9933 K :
A P M 9933
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-20
±12
-3.5
-16
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
1
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
