AO3401A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3401A uses advanced trench technology to provide
excellent R
DS(ON) ,
low gate charge and operation gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or other general applications.
Standard product
AO3401A is Pb-free (meets ROHS & Sony 259
specifications).
Features
V
DS
(V) = -30V
(V
GS
= -10V)
I
D
= -4.3A
R
DS(ON)
< 46mΩ (V
GS
= -10V)
R
DS(ON)
< 55mΩ (V
GS
= -4.5V)
R
DS(ON)
< 80mW (V
GS
= -2.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
A,F
Current
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
AF
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
Maximum
-30
±12
-4.3
-3.8
-25
1.4
0.9
-55 to 150
Units
V
V
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
43
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
