AO3405
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3405 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO3405 is Pb-free
(meets ROHS & Sony 259 specifications). AO3405L
is a Green Product ordering option. AO3405 and
AO3405L are electrically identical.
Features
V
DS
(V) = -30V
I
D
= -2.6 A (V
GS
= -10V)
R
DS(ON)
< 130mΩ (V
GS
= -10V)
R
DS(ON)
< 180mΩ (V
GS
= -4.5V)
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±12
-2.6
-2.2
-30
1.4
1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
