AO3420
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch. Standard Product AO3420 is Pb-free
(meets ROHS & Sony 259 specifications). AO3420L
is a Green Product ordering option. AO3420 and
AO3420L are electrically identical.
Features
V
DS
(V) = 20V
I
D
= 6 A (V
GS
= 10V)
R
DS(ON)
< 24mΩ (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 4.5V)
R
DS(ON)
< 42mΩ (V
GS
= 2.5V)
R
DS(ON)
< 55mΩ (V
GS
= 1.8V)
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±12
6
5
25
1.4
0.9
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
