AO3434
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3434 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge.
This device is suitable for use as a load switch or
in PWM applications. It is ESD protected.
Standard Product AO3434 is Pb-free (meets
ROHS & Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
= 4.2A
R
DS(ON)
< 52mΩ
R
DS(ON)
< 75mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
ESD Protected
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A,F
Pulsed Drain Current
Power Dissipation
B
Symbol 10 sec
V
DS
V
GS
4.2
I
D
I
DM
P
D
T
J
, T
STG
3.3
Maximum
Steady-State
30
±20
3.5
2.8
30
1.0
0.64
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
1.4
0.9
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
