AO3460
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3460/L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC
converters. It is ESD protected.
AO3460 and
AO3460L are electrically identical.
-RoHS Compliant
-AO3460L is Halogen Free
Features
V
DS
(V) = 60V
I
D
= 0.65A (V
GS
= 10V)
R
DS(ON)
< 1.7Ω (V
GS
= 10V)
R
DS(ON)
< 2Ω (V
GS
= 4.5V)
D1
TO-236
(SOT-23)
Top View
G
D
S
S1
G1
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
V
DS
Drain-Source Voltage
60
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A, F
Pulsed Drain Current
Power Dissipation
A
T
A
=25°C
T
A
=70°C
B
Units
V
V
A
0.65
I
D
I
DM
P
D
0.5
1.6
1.4
0.9
-55 to 150
W
°C
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range T
J
, T
STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
