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AO3703 参数 Datasheet PDF下载

AO3703图片预览
型号: AO3703
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管,肖特基二极管 [P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode]
分类和应用: 晶体肖特基二极管晶体管场效应晶体管
文件页数/大小: 4 页 / 108 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO3703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3703 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3703 is Pb-free (meets ROHS & Sony
259 specifications). AO3703L is a Green Product ordering
option. AO3703 and AO3703L are electrically identical.
Features
V
DS
(V) = -20V
I
D
= -2.7 A (V
GS
= -10V)
R
DS(ON)
< 97mΩ (V
GS
= -4.5V)
R
DS(ON)
< 130mΩ (V
GS
= -2.5V)
R
DS(ON)
< 190mΩ (V
GS
= -1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
SOT-23-5
Top View
G
S
A
1
2
3
5
4
D
K
G
D
K
S
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
T
A
=25°C
I
D
A
Continuous Drain Current
T
A
=70°C
I
DM
Pulsed Drain Current
B
V
KA
Schottky reverse voltage
T
A
=25°C
I
F
A
Continuous Forward Current
T
A
=70°C
I
FM
Pulsed Forward Current
B
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
MOSFET
-20
±8
-2.7
-2.1
-10
Schottky
Units
V
V
A
T
A
=25°C
T
A
=70°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
1.14
0.72
-55 to 150
Typ
80.3
117
58.5
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.