AO3702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3702/L uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge.
A Schottky diode is provided to facilitate the implementation of
a bidirectional blocking switch, or for DC-DC conversion
applications. AO3702 and AO3702L are electrically identical.
-RoHs Complaint
-AO3702L is Halogen Free
Features
V
DS
(V) = 20V
I
D
= 3.5A (V
GS
= 4.5V)
R
DS(ON)
< 62mΩ (V
GS
= 4.5V)
R
DS(ON)
< 70mΩ (V
GS
= 2.5V)
R
DS(ON)
< 85mΩ (V
GS
= 1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
SOT-23-5
Top View
G
S
A
1
2
3
5
4
D
K
G
D
K
S
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
20
±8
3.5
2.7
25
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
B
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
1.15
0.7
-55 to 150
Typ
80.3
117
43
153
173
103
20
1
0.5
10
0.66
0.42
-55 to 150
Max
110
150
80
190
220
140
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com