AO4407A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4407A uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
Standard Product
AO4407A is Pb-free (meets ROHS & Sony 259
specifications).
Features
V
DS
= -30V
(V
GS
= -10V)
I
D
= -12A
R
DS(ON)
< 11mΩ (V
GS
= -20V)
R
DS(ON)
< 13mΩ (V
GS
= -10V)
R
DS(ON)
< 38mΩ (V
GS
= -10V)
UIS TESTED!
RG, CISS, COSS, CRSS TESTED!
SOIC-8
Top View
S
S
S
G
D
D
D
D
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
V
DS
Drain-Source Voltage
-30
V
GS
±25
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
Power Dissipation
A
G
B
Units
V
V
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
-12
-10
-60
26
101
3.1
2.0
-55 to 150
-9.2
-7.4
A
mJ
1.7
1.1
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
