Nov 2002
AO4409
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4409 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
Features
V
DS
(V) = -30V
I
D
= -15 A
Max R
DS(ON)
< 7.5mΩ (V
GS
= -10V)
Max R
DS(ON)
< 12mΩ (V
GS
= -4.5V)
SOIC-8
Top View
S
S
S
G
D
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±20
-15
-12.8
-80
3
2.1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
26
50
14
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
