AO4411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
20
-I
D
(A)
15
10
5
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
60
50
45
R
DS(ON)
(m
Ω
)
40
35
30
25
20
15
10
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
70
60
R
DS(ON)
(m
Ω
)
-I
S
(A)
50
40
30
25°C
20
1.0E-05
10
0
3
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4
5
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
I
D
=-7.5A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
125°C
0.80
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=-10V
Normalized On-Resistance
55
V
GS
=-4.5V
1.60
I
D
=-7.5A
1.40
V
GS
=-10V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-3.5V
-6V
-5V
-4.5V
30
25
-4V
-I
D
(A)
20
15
10
5
125°C
25°C
V
DS
=-5V
1.20
V
GS
=-4.5V
1.00
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
