AO4420A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4420A uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
Standard Product AO4420A is Pb-free (meets ROHS
& Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
= 13.7A (V
GS
= 10V)
R
DS(ON)
< 10.5mΩ (V
GS
= 10V)
R
DS(ON)
< 12mΩ (V
GS
= 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
AF
Current
I
D
T
A
=70°C
Pulsed Drain Current
B
I
DM
B
Avalanche Current
I
AR
Repetitive avalanche energy L=0.3mH
B
E
AR
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
P
D
T
J
, T
STG
Maximum
30
±12
13.7
9.7
60
20
60
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
54
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
