AO4422A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4422A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Standard
Product AO4422A is Pb-free (meets ROHS & Sony
259 specifications). AO4422AL is a Green Product
ordering option. AO4422A and AO4422AL are
electrically identical.
Features
V
DS
(V) = 30V
I
D
= 11A
(V
GS
= 10V)
R
DS(ON)
< 15mΩ (V
GS
= 10V)
R
DS(ON)
< 24mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
Maximum
30
±20
11
9.3
50
3
2.1
-55 to 150
Units
V
V
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
