AO4435
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4435 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. Standard Product
AO4435 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V
DS
= -30V
I
D
= -10A
(V
GS
= -10V)
R
DS(ON)
< 18mΩ (V
GS
= -10V)
R
DS(ON)
< 36mΩ (V
GS
= -5V)
SOIC-8
Top View
S
S
S
G
D
D
D
D
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
V
DS
Drain-Source Voltage
-30
V
GS
±25
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
-10
-8
-80
3.1
2.0
-55 to 150
1.7
1.1
-8
-6
Units
V
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
