AO4437
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4437 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product AO4437 is Pb-free (meets ROHS & Sony
259 specifications). AO4437L is a Green Product ordering
option. AO4437 and AO4437L are electrically identical.
Features
V
DS
(V) = -12V
I
D
= -11 A (V
GS
= -4.5V)
R
DS(ON)
< 16mΩ (V
GS
= -4.5V)
R
DS(ON)
< 20mΩ (V
GS
= -2.5V)
R
DS(ON)
< 25mΩ (V
GS
= -1.8V)
ESD Rating: 4KV HBM
SOIC-8
Top View
S
S
S
G
D
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-12
±8
-11
-9
-20
3
2.1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
63
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
