AO4430
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4430/L uses advanced trench technology to provide
excellent R
DS(ON)
, shoot-through immunity, body diode
characteristics and ultra-low gate resistance. This device is
ideally suited for use as a low side switch in Notebook CPU
core power conversion.
AO4430 and AO4430L are electrically identical.
-RoHS Compliant
-AO4430L is Halogen Free
Features
V
DS
(V) = 30V
I
D
= 18A (V
GS
= 10V)
R
DS(ON)
< 5.5mΩ (V
GS
= 10V)
R
DS(ON)
< 7.5mΩ (V
GS
= 4.5V)
100% UIS Tested!
100% Rg Tested!
SOIC-8
D
D
G
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
B
B
Maximum
30
±20
18
15
80
3
2.1
30
135
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
