AO4446
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4446 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
in PWM applications.
Standard Product AO4446 is
Pb-free (meets ROHS & Sony 259 specifications).
AO4446L is a Green Product ordering option.
AO4446 and AO4446L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 15A (V
GS
= 10V)
R
DS(ON)
< 8.5mΩ (V
GS
= 10V)
R
DS(ON)
< 14.5mΩ (V
GS
= 4.5V)
S
S
S
G
D
D
D
D
D
SOIC-8
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
B
B
B
Maximum
30
±20
15
12
40
20
50
3
2.1
-55 to 150
Units
V
V
A
A
mJ
W
°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
A
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
33
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
