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AO4459 参数 Datasheet PDF下载

AO4459图片预览
型号: AO4459
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 127 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4459
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4459 uses advanced trench technology to provide
excellent R
DS(ON)
with low gate charge. This device is suitable
for use as a load switch or in PWM applications.
Standard
product AO4459 is Pb-free (meets ROHS & Sony 259
specifications). AO4459L is a Green Product ordering
option. AO4459 and AO4459L are electrically identical
.
Features
V
DS
(V) = -30V
(V
GS
= -10V)
I
D
= -6.5A
R
DS(ON)
< 46mΩ (V
GS
= -10V)
R
DS(ON)
< 72mΩ (V
GS
= -4.5V)
SOIC-8
Top View
S
S
S
G
D
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±20
-6.5
-5.3
-30
3.1
2
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
33
62
18
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.