AO4472
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4472 uses advanced trench technology to provide
excellent R
DS(ON)
, shoot-through immunity, body diode
characteristics and ultra-low gate resistance. This device is
ideally suited for use as a low side switch in Notebook CPU
core power conversion.
Standard Product AO4472 is Pb-
free (meets ROHS & Sony 259 specifications). AO4472L is
a Green Product ordering option. AO4472 and AO4472L
are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 19A (V
GS
= 10V)
R
DS(ON)
< 5.2mΩ (V
GS
= 10V)
R
DS(ON)
< 7.2mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
SOIC-8
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
30
±20
19
16
80
3
2.1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
