AO4476
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4476 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
Standard Product
AO4476 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V
DS
(V) = 30V
I
D
= 15A (V
GS
= 10V)
R
DS(ON)
< 10.5mΩ (V
GS
= 10V)
R
DS(ON)
< 17mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
P
D
T
J
, T
STG
Maximum
30
±20
15
12
60
3.7
2.4
-55 to 150
Units
V
V
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
57
16
Max
34
71
23
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
