AO4478L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4478L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. This
device is suitable for use as general puspose, PWM and
a load switch applications.
-RoHS Compliant
-Halogen Free
Features
V
DS
(V) = 30V
I
D
= 9A (V
GS
= 10V)
R
DS(ON)
<19mΩ (V
GS
= 10V)
R
DS(ON)
<26mΩ (V
GS
= 4.5V)
100% UIS Tested!
100% Rg Tested!
SOIC-8
D
G
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
S
Maximum
30
±25
9.0
7.0
60
17
14
3.1
2.0
-55 to 150
Units
V
V
T
A
=25°C
T
A
=70°C
I
D
I
DM
Iar
Ear
P
D
T
J
, T
STG
A
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
T
A
=25°C
B
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
mJ
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
