AO4485
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4485/L uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge. This
device is suitable for use as a DC-DC converter
application.
AO4485 and AO4485L are electrically identical.
-RoHS Compliant
-AO4485L is Halogen Free
Features
V
DS
(V) = -40V
I
D
= -10A
R
DS(ON)
< 15mΩ
R
DS(ON)
< 20mΩ
(V
GS
= -10V)
(V
GS
= -10V)
(V
GS
= -4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
J
=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
V
DS
Drain-Source Voltage
-40
V
GS
±20
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
Power Dissipation
A
G
B
Units
V
V
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
-12
-9
-120
-28
118
3.1
2.0
-55 to 150
-10
-8
A
mJ
1.7
1.1
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
