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AO4492L 参数 Datasheet PDF下载

AO4492L图片预览
型号: AO4492L
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 145 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4492L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4492L uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
Features
V
DS
(V) = 30V
I
D
= 13A
R
DS(ON)
< 9.5mΩ
R
DS(ON)
< 14mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R
g
Tested!
SOIC-8
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
G
S
Maximum
30
±20
13
11
100
20
20
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°C
T
C
=25°C
T
C
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
T
C
=25°C
T
C
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com