AO4601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4601 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications.
Standard
Product AO4601 is Pb-free (meets ROHS & Sony
259 specifications). AO4601L is a Green Product
ordering option. AO4601 and AO4601L are
n-channel
p-channel
-30V
V
DS
(V) = 30V
I
D
= 4.7A
(V
GS
=10V)
-8A
(V
GS
= -20V)
R
DS(ON)
R
DS(ON)
< 55mΩ (V
GS
=10V)
< 18mΩ (V
GS
=
-20V)
< 70mΩ (V
GS
=4.5V)
< 19mΩ (V
GS
=
-10V)
< 110mΩ (V
GS
= 2.5V)
Features
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
±12
4.7
4
30
2
1.44
-55 to 150
Max p-channel
-30
±25
-8
-6.9
-50
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
52
78
48
50
73
31
Max Units
62.5 °C/W
110 °C/W
60 °C/W
62.5
110
40
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
