Feb 2003
AO4606
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4606 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch,
and for a host of other applications.
Features
n-channel
V
DS
(V) = 30V
I
D
= 6.9A
R
DS(ON)
< 28mΩ (V
GS
=10V)
< 42mΩ (V
GS
=4.5V)
p-channel
-30V
-6A
R
DS(ON)
< 35mΩ (V
GS
=
10V)
< 58mΩ (V
GS
=
4.5V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
±20
6.9
5.8
30
2
1.44
-55 to 150
Max p-channel
-30
±20
-6
-5
-30
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max Units
62.5 °C/W
110 °C/W
60 °C/W
62.5
110
40
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
