AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
V
GS
(Volts)
6
4
2
0
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
1000
V
DS
=15V
I
D
=6.9A
Capacitance (pF)
900
800
700
600
500
400
300
200
100
0
0
C
rss
5
10
15
20
25
30
C
oss
(FET + Schottky)
C
iss
f=1MHz
V
GS
=0V
V
DS
(Volts)
Figure 8: Capacitance Characteristics: MOSFET +
Parallel Schottky
40
T
J(Max)
=150°C
T
A
=25°C
100
R
DS(ON)
limited
I
D
(Amps)
10
1ms
10ms
0.1s
1
1s
10s
0.1
0.1
1
V
DS
(Volts)
DC
10
T
J(Max)
=150°C
T
A
=25°C
100µs
10µs
Power W
30
20
10
100
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
100
1000
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
