AO4610
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4610 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET
to minimize body diode losses.
Standard
Product AO4610 is Pb-free (meets ROHS &
Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.
Features
n-channel
V
DS
(V) = 30V
I
D
= 8.5A(V
GS
=10V)
R
DS(ON)
< 18mΩ (V
GS
=10V)
< 28mΩ (V
GS
=4.5V)
V
F
<0.5V@1A
p-channel
-30V
-7.1A(V
GS
= -10V)
R
DS(ON)
< 25mΩ (V
GS
= -10V)
< 40mΩ (V
GS
= -4.5V)
D2
S2/A
G2
S1
G1
1
2
3
4
8
7
6
5
D2/K
D2/K
D1
D1
K
D1
G2
S2
A
G1
S1
SOIC-8
n-channel
p-channel
Max p-channel
-30
±20
-7.1
-5.6
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Units
V
A
W
°C
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
8.5
T
A
=25°C
A
Current
6.6
T
A
=70°C
I
D
B
Pulsed Drain Current
I
DM
30
2
T
A
=25°C
P
D
T
A
=70°C
1.28
Power Dissipation
Junction and Storage Temperature Range T
J
, T
STG
-55 to 150
Parameter
Reverse Voltage
Continuous Forward
A
Current
Symbol
V
DS
I
D
I
DM
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
B
Pulsed Forward Current
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
A
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
