AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
-10V
20
15
10
5
V
GS
=-2.5V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
50
Normalized On-Resistance
2
V
GS
=-4.5V
1.8
1.6
1.4
1.2
1
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
I
D
=-4.9A
1.0E+00
1.0E-01
125°C
-I
S
(A)
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
2
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
V
GS
=-4.5V
I
D
=-4.4A
I
D
=-4.9A
V
GS
=-10V
0
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-6V
-4V
-3.5V
30
25
20
-I
D
(A)
-I
D
(A)
15
10
125°C
5
25°C
V
DS
=-5V
-3V
45
R
DS(ON)
(m
Ω
)
40
35
V
GS
=-10V
30
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
20
Alpha & Omega Semiconductor, Ltd.