AO4614B
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4614B/L uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
AO4614B and AO4614BL are electrically identical.
-RoHS Compliant
-AO4614BL is Halogen Free
Features
n-channel
V
DS
(V) = 40V,
R
DS(ON)
< 30mΩ
R
DS(ON)
< 38mΩ
p-channel
V
DS
(V) = -40V,
R
DS(ON)
< 45mΩ
R
DS(ON)
< 63mΩ
D2
I
D
= 6A (V
GS
=10V)
(V
GS
=10V)
(V
GS
=4.5V)
I
D
= -5A (V
GS
=-10V)
(VGS= -10V)
(VGS= -4.5V)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
S2
G1
S1
SOIC-8
n-channel
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
40
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
B
Repetitive avalanche energy L=0.1mH
Power Dissipation
T
A
=25°C
T
A
=70°C
B
B
p-channel
Max p-channel
-40
±20
-5
-4
-30
-20
20
2
1.28
-55 to 150
mJ
W
°C
A
Units
V
V
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
6
5
30
14
9.8
2
1.28
-55 to 150
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
50
62.5
110
50
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com