AO4612
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4612 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.
Standard product AO4612 is
Pb-free (meets ROHS & Sony 259
specifications). AO4612L is a Green
Product ordering option. AO4612 and
AO4612L are electrically identical.
Features
n-channel
V
DS
(V) = 60V
I
D
= 4.5A (V
GS
=10V)
R
DS(ON)
< 56mΩ (V
GS
=10V)
< 77mΩ (V
GS
=4.5V)
p-channel
-60V
-3.2A (V
GS
= -10V)
R
DS(ON)
< 105mΩ (V
GS
= -10V)
< 135mΩ (V
GS
= -4.5V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
SOIC-8
n-channel
p-channel
Max p-channel
-60
±20
-3.2
-2.6
-20
2
1.28
-55 to 150
Typ
48
74
35
48
74
35
W
°C
A
Units
V
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
60
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
±20
4.5
3.6
20
2
1.28
-55 to 150
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Max Units
62.5 °C/W
110 °C/W
60 °C/W
62.5
110
40
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
