AO4622
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4622 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used to
form a level shifted high side switch, and for a
host of other applications.
Standard product
AO4622 is Pb-free (meets ROHS & Sony
259 specifications).
Features
n-channel
V
DS
(V) = 20V
I
D
= 7.3A (V
GS
=4.5V)
R
DS(ON)
< 23mΩ (V
GS
=10V)
< 30mΩ (V
GS
=4.5V)
< 84mΩ (V
GS
=2.5V)
p-channel
-20V
-5A (V
GS
=-4.5V)
R
DS(ON)
< 53mΩ (V
GS
= -4.5V)
< 87mΩ (V
GS
= -2.5V)
D1
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
G1
G2
S1
D2
SOIC-8
S2
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
20
V
GS
Gate-Source Voltage
±16
Continuous Drain
AF
Current
Pulsed Drain Current
Power Dissipation
B
Avalanche Current
B
Max p-channel
-20
±12
-5
-4.2
-25
2
1.44
13
25
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
B
7.3
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
6.2
35
2
1.44
13
25
-55 to 150
W
A
mJ
°C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
62.5 °C/W
110 °C/W
40 °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
