AO4625
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4625 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
power inverters, and other
applications.Standard
Product AO4625 is Pb-
free (meets ROHS & Sony 259
specifications). AO4625L is a Green Product
ordering option. AO4625 and AO4625L are
electrically identical.
Features
n-channel
p-channel
V
DS
(V) = 30V
-30V
I
D
= 6.9A (V
GS
=10V)
-5.4A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 28mΩ (V
GS
=10V)
< 45mΩ (V
GS
= -10V)
< 42mΩ (V
GS
=4.5V)
< 75mΩ (V
GS
= -4.5V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
D1
SOIC-8
S1
n-channel
p-channel
Max p-channel
-30
±20
-5.4
-4.6
-20
2
1.44
-55 to 150
W
°C
A
Units
V
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
6.9
5.8
30
2
1.44
-55 to 150
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
62.5 °C/W
110 °C/W
40 °C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
