July 2001
AO4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4701 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
Features
V
DS
(V) = -30V
I
D
= -5A
R
DS(ON)
< 49mΩ (V
GS
= 10V)
R
DS(ON)
< 64mΩ (V
GS
= 4.5V)
R
DS(ON)
< 120mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
D
K
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
G
SOIC-8
S
A
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
-30
±12
-5
-4.2
-30
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
B
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
2
1.44
-55 to 150
Typ
48
74
35
49
72
37
30
4.4
3.2
30
2
1.44
-55 to 150
Max
62.5
110
40
62.5
110
42
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Ambient
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
