AO4702
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4702 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky Diode is
packaged in parallel to improve device performance in
synchronous recitification applications, or H-bridge
configurations.
Standard Product AO4702 is Pb-free
(meets ROHS & Sony 259 specifications). AO4702L is a
Green Product ordering option. AO4702and AO4702L are
electrically identical.
Features
V
DS
(V) = 30V
I
D
= 11A (V
GS
= 10V)
R
DS(ON)
< 16mΩ (V
GS
= 10V)
R
DS(ON)
< 25mΩ (V
GS
= 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D
S
S
S
G
D
D
D
D
K
G
S
A
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
MOSFET
Symbol
V
DS
Drain-Source Voltage
30
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
B
±20
11
9.3
50
30
4.4
3.2
3
2
-55 to 150
30
3
2
-55 to 150
Schottky reverse voltage
Continuous Forward Current
T
A
=70°C
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
V
A
I
F
I
FM
P
D
T
J
, T
STG
Pulsed Diode Forward Current
W
°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
