AO4705
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±25V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-10A
-1.7
60
-2.5
A
13
16
16
21
14
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=-20V, ID=-10A
10.7
25
V
GS=-4.5V, ID=-10A
DS=-5V, ID=-10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
26
S
V
A
IS=-1A,VGS=0V
-0.72
-1
Maximum Body-Diode Continuous Current
-4.2
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2076
503
302
2
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
37.2
7
nC
nC
nC
ns
ns
ns
ns
V
GS=-10V, VDS=-15V, ID=-10A
10.4
12.4
8.2
25.6
12
VGS=-10V, VDS=-15V, RL=1.0Ω,
GEN=3Ω
R
tD(off)
tf
IF=-10A, dI/dt=100A/µs
IF=-10A, dI/dt=100A/µs
trr
33
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
23
nC
SCHOTTKY PARAMETERS
VF
Irm
CT
Forward Voltage Drop
IF=3.0A
0.48
0.07
0.52
0.15
V
VR=24V
VR=24V, TJ=125°C
VR=24V, TJ=150°C
Maximum reverse leakage current
mA
pF
4.2
20
60
15
Junction Capacitance
VR=15V
120
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t
thermal resistance rating.
≤ 10s
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
The SOA curve provides a single pulse rating.
Rev 4: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
