AO4709
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4709 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of non-
synchronous DC-DC converters.
Standard Product
AO4709 is Pb-free (meets ROHS & Sony 259
specifications). AO4709L is a Green Product ordering
option. AO4709 and AO4709L are electrically identical.
Features
V
DS
(V) = -30V
I
D
= -8A (V
GS
=
-10V)
R
DS(ON)
< 33mΩ (V
GS
=
-10V)
R
DS(ON)
< 56mΩ (V
GS
=
-4.5V)
SCHOTTKY
V
DS
(V) = 30V,IF = 3A, VF<0.5V@1A
A
S
S
G
1
2
3
4
8
7
6
5
D/K
D/K
D/K
D/K
G
D
K
SOIC-8
S
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
-30
±20
-8
-6.6
-40
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
B
T
A
=25°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
A
T
A
=70°C
I
F
I
FM
30
4.4
3.2
3
2
-55 to 150
Typ
24
54
21
36
67
25
30
3
2
-55 to 150
Max
40
75
30
40
75
30
V
A
T
A
=70°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
