SRFET
AO4714
N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET
TM
AO4714 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent R
DS(ON)
,and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Standard
Product AO4714 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
=20A (V
GS
= 10V)
R
DS(ON)
< 4.7mΩ (V
GS
= 10V)
R
DS(ON)
< 6.7mΩ (V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
G
S
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
F
Current
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
F
Maximum
30
±20
20
16
100
3.0
2.0
30
135
-55 to 150
Units
V
V
A
A
W
A
mJ
°C
Max
41
75
24
Units
°C/W
°C/W
°C/W
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
P
DSM
I
AR
B
T
A
=70°C
Avalanche Current
B
Repetitive avalanche energy L=0.3mH
E
AR
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
Typ
31
59
16
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
