SRFET
AO4716
N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET
TM
AO4716 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R
DS(ON)
,and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications. Standard
Product
AO4716 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V
DS
(V) = 30V
I
D
=16.5A (V
GS
= 10V)
R
DS(ON)
< 7mΩ (V
GS
= 10V)
R
DS(ON)
< 10mΩ (V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
S
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Avalanche Current
B
B
B
Symbol
V
DS
V
GS
10 Sec
Steady State
30
±20
16.5
12.0
9.6
180
25
94
3.1
2.0
1.7
1.1
-55 to 150
13.0
Units
V
V
A
A
A
mJ
W
°C
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
T
A
=25°C
Repetitive avalanche energy L=0.3mH
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
AF
A
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
