SRFET
TM
AO4726
N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET
The AO4726/L uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications.
AO4726 and AO4726L are electrically
identical.
-RoHS Compliant
-AO4726L is Halogen Free
D
S
S
S
G
D
D
D
D
Features
V
DS
(V) = 30V
I
D
=18A (V
GS
= 10V)
R
DS(ON)
< 6mΩ (V
GS
= 10V)
R
DS(ON)
< 7mΩ (V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
G
S
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Avalanche Current
B
B
B
Maximum
Units
V
30
±12
18
14
80
42
265
3.1
2.0
-55 to 150
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
T
A
=25°C
A
Repetitive avalanche energy L=0.3mH
Power Dissipation
T
A
=70°C
mJ
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
