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AO4800AL 参数 Datasheet PDF下载

AO4800AL图片预览
型号: AO4800AL
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 109 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4800A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4800A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in buck
converters.
Standard Product AO4800A is Pb-free
(meets ROHS & Sony 259 specifications). AO4800AL
is a Green Product ordering option. AO4800A and
AO4800AL are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
D1
D2
SOIC-8
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
30
±12
6.9
5.8
40
1.9
1.2
-55 to 150
Units
V
V
A
W
°C
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
55
90
40
Max
62.5
110
48
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.